Structure and method for transistor with line end extension

ABSTRACT

The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; an isolation feature formed in the semiconductor substrate; a first active region and a second active region formed in the semiconductor substrate, wherein the first and second active regions extend in a first direction and are separated from each other by the isolation feature; and a dummy gate disposed on the isolation feature, wherein the dummy gate extends in the first direction to the first active region from one side and to the second active region from another side.

BACKGROUND

In advanced technologies of integrated circuit industry, strainedsemiconductor structures are used to increase the carrier mobility inthe channel and enhance circuit performance. Epitaxy growth is a stepimplemented to form the strained structure. However, the epitaxy growthis sensitive to the structure of the active regions and thecorresponding environment. In one example, facet defects are formed andconstrain further epitaxy growth. Therefore, a structure of anintegrated circuit and a method making the same are needed to addressthe issues identified above.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a top view of a semiconductor structure constructed accordingto aspects of the present disclosure in one embodiment.

FIG. 2 is a fragmental top view of the semiconductor structure of FIG. 1constructed according to aspects of the present disclosure in oneembodiment.

FIG. 3 is a sectional view of the semiconductor structure of FIG. 1along line AA′ constructed according to aspects of the presentdisclosure in one embodiment.

FIG. 4 is a flowchart of a method making the semiconductor structure ofFIG. 1.

FIG. 5 is a flowchart of a method making a fin-like active regions inthe semiconductor structure of FIG. 1.

FIG. 6 is a schematic diagram to illustrate patterning a hard mask forforming the fin-like active regions in the semiconductor structure ofFIG. 1.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof various embodiments. Specific examples of components and arrangementsare described below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.Moreover, the formation of a first feature over or on a second featurein the description that follows may include embodiments in which thefirst and second features are formed in direct contact, and may alsoinclude embodiments in which additional features may be formedinterposing the first and second features, such that the first andsecond features may not be in direct contact.

FIG. 1 is a top view of a semiconductor structure 50 constructedaccording to aspects of the present disclosure in one embodiment. FIG. 2is a fragmental top view of the semiconductor structure 50 constructedaccording to aspects of the present disclosure in one embodiment. Thesemiconductor structure 50 and the method making the same arecollectively described with reference to FIGS. 1 and 2.

In one embodiment, the semiconductor structure 50 is a portion of asemiconductor wafer, or particularly a portion of a semiconductor dice(or a chip). The semiconductor structure 50 includes a semiconductorsubstrate 52. In one embodiment, the semiconductor substrate includessilicon. Alternatively, the substrate 52 includes germanium or silicongermanium. In other embodiments, the substrate 52 may use anothersemiconductor material, such as diamond, silicon carbide, galliumarsenic, GaAsP, AlInAs, AlGaAs, GaInP, or other proper combinationthereof. Furthermore, the semiconductor substrate 52 may include a bulksemiconductor such as bulk silicon and an epitaxy silicon layer formedon he bulk silicon.

Referring to FIG. 1, the semiconductor structure 50 further includesvarious active regions 54, such as active regions 54 a and 54 b. In thepresent embodiment, the active regions 54 are fin-like structuredesigned to form fin-like field effect transistors (FinFETs). In aparticular embodiment, the semiconductor structure 50 includes aplurality of fin-like active regions configured in parallel, such as afirst plurality of fin-like active regions 54 a and a second pluralityof fin-like active regions 54 b. The first plurality of fin-like activeregions 54 a and the second plurality of fin-like active regions 54 bare separated by isolation features. In one example for illustration,the first plurality of fin-like active regions 54 a are configured forn-type FinFETs (nFinFETs) and the second plurality of fin-like activeregions 54 b are configured for p-type FinFETs (pFinFETs). Variousisolation features, such as shallow trench isolation (STI) features, areformed on the semiconductor substrate 52 in a procedure to form thefin-like active regions.

The fin-like active regions 54 are formed by a proper technique. In oneexample, the formation of the fin-like active regions includes formingSTI features to define the areas for the active regions, etching thesemiconductor material (e.g., silicon) in the active regions, andepitaxy growing a semiconductor material (e.g., silicon) in the activeregions to form fin-like active regions 54. In another example, theformation of the fin-like active regions includes forming STI featuresto define the areas for the active regions, and etching to recess theSTI features such that the active regions are extruded to form fin-likeactive regions 54.

Various gate stacks are formed on the fin-like active regions 54. Thegate stacks include one or more functional gate stacks for field effecttransistors and a dummy gate stack configured over the isolationfeatures. In the present embodiment, the semiconductor structure 50includes a first gate stack 56 disposed on the first plurality offin-like active regions 54 a and a second gate stack 58 disposed on thesecond plurality of fin-like active regions 54 b. The first gate stack56 and the second gate stack 58 are configured to form respective fieldeffect transistors, such as nFinFETs and pFinFETs. Furthermore, thesemiconductor structure 50 includes a dummy gate stack 60 disposed onthe STI feature and extended to be partially over the active regions 54.Particularly, the dummy gate stack 60 is disposed on the STI featuresand covers the end portions of the active regions 54 as illustrated inFIG. 1. State differently, the fin-like active regions 54 are extendedto the dummy gate 60 such that the end portions of fin-like activeregions 54 are underlying the dummy gate stack. In furtherance of thepresent embodiment, the first plurality of fin-like active regions 54 aare extended to the dummy gate stack 60 from one side, and the secondplurality of fin-like active regions 54 b are extended to the dummy gatestack 60 from another side such that the dummy gate stack 60 covers boththe ends of the first plurality of fin-like active regions 54 a and theends of the second plurality of fin-like active regions 54 b.

In one embodiment, each of the gate stacks 56, 58 and 60 includes a maingate 62 and a gate spacer 64 formed on the sidewalls of thecorresponding main gate 62. Each main gate of the gate stacks 56, 58 and60 includes a gate dielectric feature and a gate electrode disposed onthe gate dielectric feature. The gate dielectric feature includes one ormore dielectric material and the gate electrode includes one or moreconductive material. The gate spacer includes one or more dielectricmaterial.

Further referring to FIG. 2, the configuration of the dummy gate stackis described with details. FIG. 2 is a top view of the semiconductorstructure 50 of FIG. 1 in portion for simplicity. In the presentembodiment, the fin-like active regions 54 are aligned in a firstdirection X and the gate stacks are aligned in a second direction Yperpendicular to the first direction. The dummy gate 60 includes themain gate 62 and the gate spacer 64 on the sidewalls. The main gate 62includes a width X defined in the first direction. The gate spacer 64includes a thickness T on each side illustrated in FIG. 2. The firstfin-like active regions 54 a have end portions embedded in (underlying)the dummy gate stack 60. Each embedded end portion of the first fin-likeactive regions 54 a has a dimension ZL defined in the first direction.The second fin-like active regions 54 b have end portions embedded in(underlying) the dummy gate stack 60. Each embedded end portion of thesecond fin-like active regions 54 b has a dimension ZR in the seconddirection. The first fin-like active regions 54 a and the secondfin-like active regions 54 b are spaced from each other in the firstdirection with a spacing dimension S. Various parameters defined abovesatisfies an equation as S1+ZL+ZR=X+2T. In one embodiment, thedimensions ZL and ZR of the embedded end portions of the fin-like activeregions 54 range between about 5 nm and about 10 nm. In anotherembodiment, the dummy gate stack 60 has a different width than that offunctional gate stack, such as the functional gate stack 56 or 58. Theparameters ZL and ZR define the overlaps between the fin-like activeregions (54 a or 54 b) and the dummy gate stack 60. The parameters ZLand ZR also define the offsets between the edges of the dummy gate stack60 and the edges of the isolation feature underlying the dummy gatestack 60.

FIG. 3 is a sectional view of the semiconductor structure 50 taken alonga dashed line AA′ in FIG. 1 constructed according to one embodiment ofthe present disclosure. More features are illustrated in FIG. 3 withfollowing descriptions. The semiconductor structure 50 includesfunctional gate stacks 56 and 58 and further includes a dummy gate stack60 disposed between the functional gate stacks. The dummy gate 60 isformed on the isolation feature 68 and extended in the first direction Xto the end portions of the fin-like active regions 54.

Various doped features are disposed in the semiconductor substrate 52and are formed by proper technologies, such as ion implantation. Forexample, one or more doped wells 70 are formed in the active regions. Inone embodiment, a first well 70 a is formed in the first fin-like activeregions 54 a and a second well 70 b is formed in the second fin-likeactive regions 54 b. In furtherance of the embodiment, the first well 70a includes a p-type dopant for nFinFETs and the second well 70 bincludes a n-type dopant for pFinFETs.

The semiconductor structure 50 includes one or more epitaxy grownsemiconductor features (epi features) 72 for strained effect to enhancethe circuit performance. In one embodiment, the semiconductor structure50 includes epi features 72 a and 72 b disposed on the both sides of thefirst functional gate 56. In another embodiment, the semiconductorstructure 50 includes epi features 72 c and 72 d disposed on the bothsides of the second functional gate 58. In the present embodiment, theepi features 72 a, 72 b, 72 c and 72 d are present. Particularly, theepi features 72 a and 72 b include epi grown silicon carbide with thestrain effect tuned to enhance the performance of nFinFETs formed in theactive regions 54 a and the epi features 72 c and 72 d include epi grownsilicon germanium with the strain effect tuned to enhance theperformance of pFinFETs formed in the active regions 54 b. The epifeatures are extended to the dummy gate stack 60 but are spaced awayfrom the isolation feature 68, due the offset of the dummy gate 60 tothe isolation feature 68.

The formation of the epi features includes etching the semiconductorsubstrate to form the recesses and epi growing to form the correspondingepi features, such as silicon germanium or silicon carbide. In oneembodiment, epi features 72 may be grown to extrude above the surface ofsemiconductor substrate 52.

During the etching process to form the recesses, the recesses is offsetfrom the isolation feature 68 by the dummy gate 60 such that thesidewalls of the isolation feature 68 are exposed, resulting in therecesses with surfaces of only semiconductor material (silicon in thepresent embodiment). Accordingly, the epi growth substantially occurs inthe surfaces of the recesses and the facet defect issue is eliminated.

In the existing method, the recesses expose the surfaces of theisolation feature (STI feature). The epi growth cannot grow on thesurface of the isolation feature that is dielectric material, such assilicon oxide. Void defects are formed between the epi features and theisolation features. Those void defects are referred to as facet defects.In contrast, the disclosed semiconductor structure 50 and thecorresponding method eliminate the facet defects.

The semiconductor structure 50 further includes source and drainfeatures 74 formed in the active regions 54 (e.g., 54 a and 54 b) andrespectively disposed on the sides of the corresponding functional gatestack (56 or 58). The source and drain features 74 include light dopeddrain (LDD) features substantially aligned with the corresponding maingate stack and the heavily doped source and drain (S/D) aligned with thecorresponding gate spacer 64. The LDD features and the heavily doped S/Dare collectively referred to as source and drain features 74. The sourceand drain features 74 are formed by various steps of ion implantation.In the present embodiment, the source and drain features 74 in the firstactive regions 54 a have n-type dopant, such as phosphorous, configuredto form nFinFETs. The source and drain features 74 in the second activeregions 54 b have p-type dopant, such as boron, configured to formpFinFETs.

The gate stacks (including the functional gate stacks 56 and 58 and thedummy gate stack 60) include the main gates 62 and the gate spacers 64.Each main gate stack 62 includes a gate dielectric feature 62 a and agate electrode 62 b disposed on the gate dielectric feature 62 a. Thegate dielectric features 62 a include one or more dielectric materialsdisposed on the semiconductor substrate 52. The gate electrodes 62 binclude one or more conductive materials. In one embodiment, the gatedielectric features 62 a include silicon oxide and the gate electrodes62 b include polysilicon, formed by a procedure including deposition andpatterning. The patterning includes lithography process and etchprocess.

In another embodiment, the gate dielectric features 62 a include a highk dielectric material layer and the gate electrodes 62 b include a metallayer, referred to as high k metal gates. The high k metal gates may beformed by proper procedure, such as gate-last procedure wherepolysilicon gate stacks are formed first and then replaced by etching,deposition and polishing. In this embodiment, the gate dielectricfeatures 62 a may additionally include an interfacial layer (IL)disposed between the semiconductor substrate and the high k dielectricmaterial layer. The gate electrodes 62 b may include a metal film of aproper work function to the respective transistors according to type(n-type or p-type) for tuned threshold voltage, therefore referred to aswork function metal. In this case, the work function metal for nFinFETsare different from the work function metal for pFinFETs.

In yet another embodiment, the functional gate stacks 56 and 58 includesthe high k dielectric material layer for gate dielectric and the metallayer for gate electrode but the dummy gate include silicon oxide forgate dielectric and polysilicon for gate electrode.

FIG. 4 is a flowchart of a method 100 forming the semiconductorstructure 50 constructed according to aspects of the present disclosureaccording to one or more embodiments. The method 100 is described withreference to FIGS. 1 through 4.

The method 100 begins at step 102 by providing a semiconductor substrate52. The semiconductor substrate 52 includes silicon or alternativelyother suitable semiconductor material.

The method 100 proceeds to step 104 by forming fin-like active regions54. In one embodiment, the fin-like active regions 54 are formed by aprocedure including forming STI features to define the areas for theactive regions, and etching back the STI features such that the activeregions are extruded to form the fin-like active regions 54.

In furtherance of the embodiment, a more detailed procedure for theformation of the fin-like active regions 54 is provided below withreference to FIG. 5 as a flowchart of forming the fin-lie active regionsaccording to various embodiments.

At step 112, a hard mask is formed on the semiconductor substrate. Inone example, the hard mask includes a silicon oxide film (pad oxide) anda silicon nitride film on the pad oxide. The hard mask layer may beformed by a proper techniques. In one example, silicon oxide is formedby thermal oxidation and silicon nitride is formed by chemical vapordeposition (CVD).

At step 114, the hard mask layer is patterned to form various openings.The patterned hard mask layer define the areas for isolation featuresand areas for active regions. Particularly, the openings of thepatterned hard mask layer define the areas for the isolation features.The hard mask layer is patterned by lithography process and etchingprocess.

To reduce the line end shortening and corner rounding issues, twophotomasks are used to pattern the hard mask layer. The first photomaskdefines fin lines and the second photomask defines line end cut patternsand creates end-to-end spacing. As illustrated in FIG. 6 as a top viewof the hard mask layer, the first photomasks defines fin features 126and the second photomask defines line end cut patterns 128 to form thefin-like active regions 54 of the semiconductor structure 50. In oneexample, the first photomask defines the fin features aligned in a firstdirection X and the second photomask defines the line end cut feature128 aligned in a second direction Y perpendicular to the first directionX.

In one embodiment, the two photomasks are utilized in a double exposureprocedure. A photoresist layer is coated on the hard mask layer. Twoexposures are implemented sequentially with the first and secondphotomasks, respectively. Then the double exposed photoresist layer isdeveloped to form a patterned photoresist layer with openings definedtherein. An etching process follows to etch the hard mask layer throughthe openings of the patterned photoresisit layer. The lithographyprocess may include other steps, such as soft baking post-exposurebaking and/or hard baking. The etching process may include two etchsteps to respectively etch silicon nitride and silicon oxide.

In another embodiment, the two photomasks are utilized in a doubleexposure and double etching procedure. A first photoresist layer ispatterned (coating, exposure and developing) using the first photomask.Then an etching process follows to etch the hard mask layer through theopenings of the first photoresist layer. Similarly, a second photoresistlayer is patterned using the second photomask. Then an etching processfollows to etch the hard mask layer through the openings of the secondphotoresist layer.

At step 116, the semiconductor substrate is etched through the openingsof the hard mask layer, forming trenches in the semiconductor trenches.The pattern of the hard mask layer is transferred to the semiconductorsubstrate.

At step 118, the trenches of the semiconductor substrate are filled withone or more dielectric materials to form shallow trench isolation (STI)features. In one embodiment, the shallow trench isolation featuresinclude silicon oxide. The silicon oxide can be filled in the trenchesby a CVD process. In various examples, the silicon oxide can be formedby a high density plasma chemical vapor deposition (HDPCVD). The siliconoxide may be alternatively formed by a high aspect ratio process (HARP).In another embodiment, the trench isolation features may include amulti-layer structure. In furtherance of the embodiment, the STIfeatures include other suitable materials, such as silicon nitride orsilicon oxynitride.

In one embodiment, a polishing process, such as chemical mechanicalpolishing (CMP), is followed to remove the excessive dielectric materialon the semiconductor substrate and planarize the surface.

At step 120, the STI features are etched back such that the STI featuresare recessed and the semiconductor portions (silicon portions) areextruded relative to the recessed STI features, resulting in fin-likeactive regions. Accordingly, the top surface of the STI features islower than the top surface of the fin-like active regions.

Referring back to FIG. 4, after the formation of the fin-like activeregions at step 104, the method 100 proceeds to step 106 by forming gatestacks, including the functional gate stacks (56 and 58) and the dummygate stack 60. As illustrated in FIG. 3, the gate stacks (including thefunctional gate stacks 56 and 58 and the dummy gate stack 60) includethe main gates 62 and the gate spacers 64. Each main gate stack 62includes a gate dielectric feature 62 a and a gate electrode 62 bdisposed on the gate dielectric feature 62 a. In various embodiments,the gate stacks may include polysilicon or metal for gate electrode andmay include silicon oxide and/or high k dielectric material for gatedielectric. When the gate stacks include high k dielectric and metal(referred to as high k metal gates), the formation of the high k metalgates may implement gate-first process where the high k dielectricmaterial and metal directly deposited and patterned at this step.Alternatively, high k metal gates may be formed by other techniques,such as gate-last process or high-k-last process in various embodiments.

The method 100 proceeds to step 108 by forming source and drain features74 in the active regions 54 (e.g., 54 a and 54 b). The source and drainfeatures are respectively disposed on the sides of the correspondingfunctional gate stack (56 or 58). In one embodiment, the source anddrain features 74 include light doped drain (LDD) features substantiallyaligned with the corresponding main gate stack and the heavily dopedsource and drain (S/D) aligned with the corresponding gate spacer 64.The source and drain features 74 are formed by proper technique (such asion implantation) and are followed by thermal anneal for activation. Inthe present embodiment, the source and drain features 74 in the firstactive regions 54 a include n-type dopant configured to form nFinFETs.The source and drain features 74 in the second active regions 54 binclude p-type dopant configured to form pFinFETs.

The formation of the gate stacks and the formation of the source anddrain features are integrated in one procedure. For example, the heavilydoped source and drain are formed after the formation of the gatespacer. One embodiment of the procedure to form gate stacks and thesource/drain features is described below.

The gate material layers are formed on the substrate and patterned toform gate stacks. The gate material layers include an interfacial layer(such as silicon oxide) and a high k dielectric material disposed on theinterfacial layer and a polysilicon layer on the high k dielectricmaterial layer. The patterning technique includes lithography processand etching. A hard mask may be utilized as an etch mask to pattern thegate material layers.

The LDD features are then formed by ion implantation and may be followedby thermal anneal for activation. The gate spacers are formed on thesidewalls of the gate stacks by deposition and dry etch. Particularly,the dummy gate stack 60 (including gate spacer) is formed to land on theSTI feature 68 and is extended to cover end portions of the fin-likeactive regions 54. In the present embodiment, the dummy gate 60 coversthe end portions of the fin-like active regions 54 a on one side andcovers the end portions of the fin-like active regions 54 b on anotherside.

The semiconductor substrate is then etched to form recesses. In thepresent embodiment, silicon substrate is etched using a proper etchant.The recesses are formed in the silicon substrate and are separated fromthe STI feature 68 by silicon. The offsets between the edge of the STIfeature 68 and the edge of the dummy gate stack 60 are ZL and ZR,respectively, as illustrated in FIG. 2. The offsets ZL and ZR aredesigned to be enough such that the recesses cannot reach and expose theSTI feature 68.

Then the epitaxy growth (or epi growth) is implemented to form epi grownfeatures of a semiconductor material different from the substrate toachieve proper strain effect for enhanced channel mobility. In oneembodiment, the silicon germanium is epi grown in the recesses forpFinFETs. In another embodiment, the silicon carbide is epi grown in therecesses for nFinFETs.

The epi growth may grow the epi features substantially coplanar with thesurface of the silicon surface or alternatively higher than the siliconsurface such that the epi features are extruded out. Heavily dopedsource and drain are formed by ion implantation after the epitaxygrowth.

In another embodiment, the gate spacer used for recess etching isremoved and a second gate spacer is formed on the sidewalls of the gatestack. Thus, the second gate spacer is tuned to offset the heavily dopedsource and drain while the first gate spacer is tuned to offset theoverlap of the fin end and the dummy gate stack.

In yet another embodiment, heavily doped source and drain are formedduring the epi growth wherein the epi features are in situ doped duringthe epi growth. The precursor of the ep growth includes chemical tointroduce the dopant simultaneously during the epi growth.

Other processing steps may be implemented before, during and/or afterthe method 100. In one embodiment, an interlayer dielectric (ILD) layeris formed on the substrate and the gate stack. The ILD layer isdeposited by a proper technique, such as CVD. The ILD includes adielectric material, such as silicon oxide, low k dielectric material ora combination. Then a chemical mechanical polishing (CMP) process may beapplied thereafter to polarize the surface of the ILD. In one example,the gate stack is exposed by the CMP process for the subsequentprocessing steps. In the gate-last process to form high k metal gates,the polysilicon layer is replaced by one or more metals after theformation of the ILD layer. More specifically, the polysilicon layer inthe gate stacks is removed by etching, resulting in gate trenches. Thenthe gate trenches are filled by one or more metal materials, formingmetal gate stacks. In the present embodiment, a first metal having aproper work function is deposited in the gate trenches and a secondmetal is disposed on the first metal to fill the gate trenches. Thefirst metal is also referred to as work function metal. The second metalmay include aluminum or tungsten.

In the high-k-last process, both the gate dielectric and the polysiliconare removed by etching. Afterward, the high k dielectric material andmetal are then filled in to form high k metal gate stacks.

In another example, an interconnect structure is further formed on thesubstrate and is designed to couple various transistors and otherdevices to form a functional circuit. The interconnect structureincludes various conductive features, such as metal lines for horizontalconnections and contacts/vias for vertical connections. The variousinterconnect features may implement various conductive materialsincluding copper, tungsten and silicide. In one example, a damasceneprocess is used to form copper-based multilayer interconnect structure.In another embodiment, tungsten is used to form tungsten plug in thecontact holes.

Although not shown, other features and the processing steps making thesefeatures may present, including various device features such as silicidefor contact, and multilayer interconnection (MLI). In one example, thesilicide contact layer includes nickel silicide, cobalt silicide,tungsten silicide, tantalum silicide, titanium silicide, platinumsilicide, erbium silicide, palladium silicide, or combinations thereof.The gate spacers may have a multilayer structure and may include siliconoxide, silicon nitride, silicon oxynitride, or other dielectricmaterials.

Although embodiments of the present disclosure have been described indetail, those skilled in the art should understand that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure. For example, thesemiconductor structure 50 includes fin-like active regions. However,the present disclosure is also applicable to a two-dimensional circuitwherein the active regions and the STI features are substantiallycoplanar. The overlap between the dummy gate stack and the end portionof the active regions, as disclosed, can be implemented to reduce thefacet defects when the epi features are incorporated in the field effecttransistors for strain effect. In another example, the dummy gate 60 hasa width different from the functional gate stack such that the overlapbetween the dummy gate and the active regions is tuned to effectivelyprevent the facet issue. In yet another example, the dummy gate mayinclude different materials, such as silicon oxide and polysilicon whilethe functional gate stacks include high k dielectric material and metal.In yet another embodiment, only silicon germanium epi features areformed in the pFinFETs while the nFinFETs have source and drain featuresformed in the silicon substrate.

Thus, the present disclosure provides a semiconductor structure. Thesemiconductor structure includes a semiconductor substrate; an isolationfeature formed in the semiconductor substrate; a first active region anda second active region formed in the semiconductor substrate, whereinthe first and second active regions extend in a first direction and areseparated from each other by the isolation feature; and a dummy gatedisposed on the isolation feature, wherein the dummy gate extends in thefirst direction to the first active region from one side and to thesecond active region from another side.

In one embodiment, the semiconductor structure further includes a firstfunctional gate disposed on the first active region and configured toform a first field effect transistor; and a second functional gatedisposed on the second active region and configured to form a secondfield effect transistor.

In another embodiment, the semiconductor structure further includesfirst epitaxy features formed on the first active region and interposedby the first functional gate stack. In yet another embodiment, thesemiconductor substrate includes silicon; the first epitaxy featuresinclude silicon germanium; and the first field transistor includes oneof a p-type field effect transistor and a n-type field effecttransistor, wherein the first epitaxy features are separated from thedummy gate by a portion of the semiconductor substrate.

In another embodiment, the semiconductor structure further includessecond epitaxy features formed on the second active region andinterposed by the second functional gate stack. In yet anotherembodiment, the second epitaxy features include silicon carbide; and thesecond field transistor includes another one of the p-type field effecttransistor and n-type field effect transistor, wherein the secondepitaxy features are separated from the dummy gate by another portion ofthe semiconductor substrate.

In yet another embodiment, the first and second functional gates eachinclude a high k dielectric material layer and a metal layer on the highk dielectric material layer.

In yet another embodiment, the isolation feature is a shallow trenchisolation (STI) feature extending a first dimension S1 in the firstdirection. In another embodiment, the first active region and the secondactive region are fin-like active regions aligned in the firstdirection; and the dummy gate aligned in a second directionperpendicular to the first direction and spanning a second dimension S2in the first direction, wherein the second dimension is greater than thefirst dimension.

In yet another embodiment, the dummy gate extends to the first activeregion with a first overlap dimension Z1 in the first direction; and thedummy gate extends to the second active region with a second overlapdimension Z2 in the first direction, wherein the S1, S2, Z1 and Z2 arerelated in a formula S2=S1+Z1+Z2. In yet another embodiment, the dummygate includes a main gate stack and a gate spacer disposed on both sidesof the main gate stack; the main gate stack has a width W in the firstdirection and the gate spacer has a thickness T; and the seconddimension S2 is equal to W+2T.

The present disclosure also provides another embodiment of asemiconductor structure. The semiconductor structure includes a siliconsubstrate; first plurality of fin-like active regions formed in thesilicon substrate and oriented in a first direction; second plurality offin-like active regions formed in the silicon substrate and oriented inthe first direction; a shallow trench isolation (STI) feature formed inthe silicon substrate and interposed between the first fin-like activeregions and the second fin-like active regions; and a dummy gatedisposed on the STI feature, wherein the dummy gate extends in the firstdirection to overlap with the first fin-like active regions from oneside and to overlap with the second fin-like active regions from anotherside.

In one embodiment of the semiconductor structure, the first fin-likeactive regions each include a first end contacting the STI feature andthe second fin-like active regions each include a second end contactingthe STI feature.

In another embodiment, the STI feature spans a first dimension S1 in afirst direction; the first ends and the second ends have a firstdistance in the first direction, wherein the first distance is equal tothe first dimension S1; and the dummy gate spans a second dimension S2in the first direction, S2 being greater than S1.

In yet another embodiment, the dummy gate overlaps with the firstfin-like active regions of a first overlap dimension Z1 in the firstdirection; the dummy gate overlaps with the second fin-like activeregions of a second overlap dimension Z2 in the first direction; and S1,S2, Z1 and Z2 are related in a formula S2=S1+Z1+Z2.

In yet another embodiment, the STI feature includes a top surface lowerthan top surfaces of the first and second fin-like active regions.

The present disclosure also provides an embodiment of a method thatincludes forming an isolation feature in a semiconductor substrate;forming a first fin-like active region and a second fin-like activeregion in the semiconductor substrate and interposed by the isolationfeature; forming a dummy gate stack on the isolation feature, whereinthe dummy gate extends to the first fin-like active region from one sideand to the second fin-like active region from another side.

In one embodiment, the method further includes forming epitaxy grownsource and drain features in the first fin-like active region. Inanother embodiment, the forming of the dummy gate stack includes forminga first gate having polysilicon and replacing the polysilicon withmetal.

In yet another embodiment, the forming of the isolation feature and theforming of the first fin-like active region and the second fin-likeactive region include forming a hard mask using a first photomaskdefining an active region and a second photomask defining a cut feature,wherein the hard mask includes openings defining the first and secondfin-like active regions.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: anisolation feature formed in a semiconductor substrate; a first fin and athird fin, adjacent to the first fin, extending in a first direction onthe semiconductor substrate and a second fin and a fourth fin, adjacentto the second fin, extending in the first direction on the semiconductorsubstrate and being collinear with the first fin and third finrespectively, wherein the isolation feature interposes the first fin andthe second fin, and the isolation feature interposes the first fin andthe third fin, such that a first contiguous region of insulatingmaterial is disposed between the first fin and the third fin, and asecond contiguous region of insulating material is disposed between thefirst fin and the second fin; a first active region in the first fin anda second active region in the second fin, wherein the first and secondactive regions extend in a first direction and are separated from eachother by the second contiguous region of insulating material of theisolation feature; a dummy gate disposed on the second contiguous regionof insulating material of the isolation feature and extending over endregions of at least the first fin and the third fin; a first functionalgate disposed on the first active region and configured to form a firstfield effect transistor; a second functional gate disposed on the secondactive region and configured to form a second field effect transistor; afirst epitaxy source/drain feature formed in a trench in the firstactive region of the first fin and interposing the first functional gateand the dummy gate in the first direction, wherein a bottom edge of thefirst epitaxy feature is below a top surface of the isolation featureand wherein a sidewall of the trench nearest the dummy gate is definedby a semiconductor material of the first fin, wherein the first epitaxysource/drain feature is separated from the second contiguous region ofinsulating material of the isolation feature by a portion of thesemiconductor material of the first fin the portion having a length inthe first direction that is defined by a distance the dummy gate extendsover the end region of the first fin.
 2. The semiconductor structure ofclaim 1, wherein the semiconductor substrate includes silicon; the firstepitaxy source/drain feature includes silicon germanium; and the firstfield transistor includes one of a p-type field effect transistor and an-type field effect transistor.
 3. The semiconductor structure of claim1, further comprising a second epitaxy feature formed on the secondactive region and interposing the dummy gate and the second functionalgate.
 4. The semiconductor structure of claim 3, wherein the secondepitaxy feature includes silicon carbide; and the second fieldtransistor includes one of a p-type field effect transistor and a n-typefield effect transistor, wherein the second epitaxy feature is separatedfrom the second contiguous region of insulating material of theisolation feature another portion of the semiconductor substrate.
 5. Thesemiconductor structure of claim 1, wherein the first and secondfunctional gates each include a high k dielectric material layer and ametal layer on the high k dielectric material layer.
 6. Thesemiconductor structure of claim 1, wherein the isolation feature is ashallow trench isolation (STI) feature and the second contiguous regionof insulating material of the isolation feature extends a firstdimension S1 in the first direction.
 7. The semiconductor structure ofclaim 6, wherein the dummy gate aligned in a second directionperpendicular to the first direction and spanning a second dimension S2in the first direction, wherein the second dimension is greater than thefirst dimension.
 8. The semiconductor structure of claim 7, wherein thedummy gate extends to the first active region with a first overlapdimension Z1 in the first direction; and the dummy gate extends to thesecond active region with a second overlap dimension Z2 in the firstdirection, wherein the S1, S2, Z1 and Z2 are related in a formulaS2=S1+Z1+Z2.
 9. The semiconductor structure of claim 8, wherein thedummy gate includes a main gate stack and a gate spacer disposed on bothsides of the main gate stack; the main gate stack has a width W in thefirst direction and the gate spacer has a thickness T; and the seconddimension S2 is equal to W+2T.
 10. The semiconductor structure of claim1, further comprising: a third active region in the third fin; a thirdfunctional gate disposed on the third active region and configured toform a third field effect transistor; and a third epitaxy feature formedin the third active region and interposing the third functional gate andthe dummy gate, wherein the third epitaxy feature is separated from thesecond contiguous region of insulating material by a second portion ofthe semiconductor substrate having a second length, wherein the secondlength is defined by a distance the dummy gate extends over the endregion of the third fin.
 11. A semiconductor structure, comprising:first plurality of adjacent fin-like active regions formed in a siliconsubstrate and oriented in a first direction; second plurality ofadjacent fin-like active regions formed in the silicon substrate andoriented in the first direction; a shallow trench isolation (STI)feature formed in the silicon substrate and interposed between the firstplurality of adjacent fin-like active regions and the second pluralityof adjacent fin-like active regions; a dummy gate disposed on the STIfeature and oriented in a second direction substantially perpendicularto the first direction, wherein the dummy gate has a length that extendsin the first direction to extends over end regions of the firstplurality of adjacent fin-like active regions from one side andextending over end regions of the second plurality of adjacent fin-likeactive regions from another side; a first functional gate oriented inthe second direction and disposed on each of the first plurality ofadjacent fin-like active regions; a second functional gate oriented inthe second direction and disposed on each of the second pluralityadjacent of fin-like active regions; and a first source/drain epitaxyfeature formed on a first fin of the first plurality of adjacentfin-like active regions, wherein a bottom and two opposing sidewalls ofthe first source/drain epitaxy feature interface the first fin of thesilicon substrate, wherein the first source/drain epitaxy featureinterposes the first functional gate and the STI feature and issubstantially coplanar with the STI feature, wherein the firstsource/drain epitaxy feature is separated from the STI feature by aportion of the first fin of the silicon substrate having a length ofsilicon material in the first direction, the length defined by adistance the dummy gate extends over the end region of the first fin.12. The semiconductor structure of claim 11, wherein the first pluralityof fin-like active regions each include a first end contacting the STIfeature and the second plurality of fin-like active regions each includea second end contacting the STI feature.
 13. The semiconductor structureof claim 12, wherein the STI feature spans a first dimension S1 in afirst direction; the first ends and the second ends have a firstdistance in the first direction, wherein the first distance is equal tothe first dimension S1; and the dummy gate spans a second dimension S2in the first direction, S2 being greater than S1.
 14. The semiconductorstructure of claim 13, wherein the dummy gate overlaps with the firstfin-like active regions of a first overlap dimension Z1 in the firstdirection; the dummy gate overlaps with the second fin-like activeregions of a second overlap dimension Z2 in the first direction; and S1,S2, Z1 and Z2 are related in a formula S2=S1+Z1+Z2.
 15. Thesemiconductor structure of claim 11, wherein the STI feature includes atop surface lower than top surfaces of the first and second fin-likeactive regions.